IndiumV3, Chine, Analysis, bibRecord, 000064

Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

Identifieur interne : 000064 ( Chine/Analysis ); précédent : 000063; suivant : 000065

Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

Auteurs : RBID : Pascal:13-0147606

Descripteurs français

Pascal (Inist)
- Matériau dopé, Métal transition, Couche mince, Addition indium, Couche mince transparente, Structure surface, Effet de Burstein Moss, Cadmium Oxyde, CdO:In, 6855J, 7820C.

English descriptors

KwdEn :
- Burstein Moss effect, Cadmium Oxides, Doped materials, Indium additions, Surface structure, Thin films, Transition elements, Transparent thin film.

Abstract

Indium doped cadmium oxide (CdO:ln) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein-Moss effect. CdO:ln films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10^-5 Ω cm, high electron mobility of 142 cm²/Vs, and mean transmittance over 80% from 500 to 1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

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Pascal:13-0147606

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition</title>
<author><name>YUANKUN ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Composite Materials and Structures, Harbin Institute of Technology</s1>
<s2>Harbin 150080</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Harbin 150080</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Plasma Applications Group, Lawrence Berkeley National Laboratory</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA 94720</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mendelsberg, Rueben J" uniqKey="Mendelsberg R">Rueben J. Mendelsberg</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Plasma Applications Group, Lawrence Berkeley National Laboratory</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA 94720</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Molecular Foundry, Lawrence Berkeley National Laboratory</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA 94720</wicri:noRegion>
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<author><name>JIAQI ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Composite Materials and Structures, Harbin Institute of Technology</s1>
<s2>Harbin 150080</s2>
<s3>CHN</s3>
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<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Harbin 150080</wicri:noRegion>
</affiliation>
</author>
<author><name>JIECAI HAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Composite Materials and Structures, Harbin Institute of Technology</s1>
<s2>Harbin 150080</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Harbin 150080</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anders, Andre" uniqKey="Anders A">André Anders</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Plasma Applications Group, Lawrence Berkeley National Laboratory</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA 94720</wicri:noRegion>
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<publicationStmt><idno type="inist">13-0147606</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0147606 INIST</idno>
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<idno type="wicri:Area/Chine/Extraction">000064</idno>
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<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Burstein Moss effect</term>
<term>Cadmium Oxides</term>
<term>Doped materials</term>
<term>Indium additions</term>
<term>Surface structure</term>
<term>Thin films</term>
<term>Transition elements</term>
<term>Transparent thin film</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Matériau dopé</term>
<term>Métal transition</term>
<term>Couche mince</term>
<term>Addition indium</term>
<term>Couche mince transparente</term>
<term>Structure surface</term>
<term>Effet de Burstein Moss</term>
<term>Cadmium Oxyde</term>
<term>CdO:In</term>
<term>6855J</term>
<term>7820C</term>
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<front><div type="abstract" xml:lang="en">Indium doped cadmium oxide (CdO:ln) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein-Moss effect. CdO:ln films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10<sup>-5</sup>
 Ω cm, high electron mobility of 142 cm<sup>2</sup>
/Vs, and mean transmittance over 80% from 500 to 1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition</s1>
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<fA11 i1="01" i2="1"><s1>YUANKUN ZHU</s1>
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<fA11 i1="02" i2="1"><s1>MENDELSBERG (Rueben J.)</s1>
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<fA11 i1="03" i2="1"><s1>JIAQI ZHU</s1>
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<fA11 i1="04" i2="1"><s1>JIECAI HAN</s1>
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<fA11 i1="05" i2="1"><s1>ANDERS (André)</s1>
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<fA14 i1="01"><s1>Center for Composite Materials and Structures, Harbin Institute of Technology</s1>
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<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Plasma Applications Group, Lawrence Berkeley National Laboratory</s1>
<s2>Berkeley, CA 94720</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="03"><s1>Molecular Foundry, Lawrence Berkeley National Laboratory</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>44 ref.</s0>
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<fC01 i1="01" l="ENG"><s0>Indium doped cadmium oxide (CdO:ln) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein-Moss effect. CdO:ln films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10<sup>-5</sup>
 Ω cm, high electron mobility of 142 cm<sup>2</sup>
/Vs, and mean transmittance over 80% from 500 to 1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
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<fC02 i1="02" i2="3"><s0>001B70H20C</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>02</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<fC03 i1="05" i2="X" l="SPA"><s0>Película transparente</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<fC03 i1="07" i2="X" l="FRE"><s0>Effet de Burstein Moss</s0>
<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>6855J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>45</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>7820C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>46</s5>
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<fN21><s1>119</s1>
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</record>

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Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri